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Volumn 183, Issue 1, 2001, Pages 139-143
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Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON ENERGY LEVELS;
GALLIUM NITRIDE;
LIGHT ABSORPTION;
LIGHT EMISSION;
MATHEMATICAL MODELS;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SPECTRUM ANALYSIS;
SUBSTRATES;
ABSORPTION COEFFICIENTS;
FABRY-PEROT OSCILLATIONS;
SAPPHIRE SUBSTRATES;
STOKES SHIFT;
THERMALLY DETECTED OPTICAL ABSORPTION;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0035123403
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200101)183:1<139::AID-PSSA139>3.0.CO;2-P Document Type: Article |
Times cited : (5)
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References (10)
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