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Volumn 183, Issue 1, 2001, Pages 139-143

Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; GALLIUM NITRIDE; LIGHT ABSORPTION; LIGHT EMISSION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTRUM ANALYSIS; SUBSTRATES;

EID: 0035123403     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<139::AID-PSSA139>3.0.CO;2-P     Document Type: Article
Times cited : (5)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.