A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2002-January, Issue , 2002, Pages 59-62

  Ouyang, Qiqing Christine ^a   Koester, S J ^a   Chu, J O ^a   Grill, A ^a   Subbanna, S ^b   Hennan, D A ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

CMOS technology; Epitaxial layers; Germanium silicon alloys; HEMTs; Medical simulation; MODFETs; Radio frequency; Silicon germanium; Solid modeling

Indexed keywords

AMPLIFICATION; BICMOS TECHNOLOGY; CMOS INTEGRATED CIRCUITS; EPITAXIAL LAYERS; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MODFETS; SEMICONDUCTOR DEVICES;

CMOS TECHNOLOGY; GERMANIUM SILICON ALLOY; MEDICAL SIMULATIONS; RADIO FREQUENCIES; SILICON GERMANIUM; SOLID MODEL;

SILICON ALLOYS;

EID: 2942723283     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2002.1034516     Document Type: Conference Paper

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