An analysis of the effective position of the two-dimensional electron gas in the channel of MODFET epitaxial layer structures

IEEE Transactions on Electron Devices

Volumn 45, Issue 7, 1998, Pages 1622-1624

  Wood, J ^a,b   Morton, C G ^a,b  

^a UNIVERSITY OF YORK   (United Kingdom)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

TWO-DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 0032121927     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.701499     Document Type: Article

References (9)

1. T. J. Drummond, H. Morkoç, K. Lee, and M. Shur, "Model for modulation-doped field effect transistor," IEEE Electron Device Lett., vol. EDL-3, pp. 338-341, Nov. 1982.
2. K. Lee, M. Shur, T. J. Drummond, S. L. Su, W. G. Lyons, R. Fischer, and H. Morkoç, "Design and fabrication of high transconductance modulation-doped (Al,Ga)As/GaAs FET's," J. Vac. Sci. Technol, vol. Bl, no. 2, pp. 186-189, 1983.
3. D. Delagebeaudeuf and N. T. Linh, "Charge control of the heterojunction two-dimensional electron gas for MESFET applications," IEEE Trans. Electron Devices, vol. ED-28, pp. 790-795, July 1981.
4. "Metal-(n)AlGaAs-GaAs two-dimensional electron gas FET," IEEE Trans. Electron Devices, vol. ED-29, pp. 955-960, June 1982.
5. Y. Ando and T. Itoh, "Analysis of charge control in pseudomorphic twodimensional electron gas field effect transistors," IEEE Trans. Electron Devices, vol. 35, pp. 2295-2301, Dec. 1988.
6. F. Stern and S. Das Sarma, "Electron energy levels in GaAsGai-zAlzAs heterojunctions," Phys. Rev. B, vol. 30, no. 2, pp. 840-847, 1984.
7. C. G. Morton, "The epitaxial layer design of HEMT's," D. Phil, thesis, Univ. York, York, U.K., 1994.
8. C. G. Morton and J. Wood, "MODFET versus MESFET: The capacitance argument," IEEE Trans. Electron Devices, vol. 41, pp. 1477-1480, Aug. 1994.
9. M. C. Foisy, P. J. Tasker, B. Hughes, and L. F. Eastman, "The role of inefficient charge modulation in limiting the current-gain cut-off frequency of the MODFET," IEEE Trans. Electron Devices, vol. 35, pp. 871-877, July 1988.