Modeling for profile-based process-window metrology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5378, Issue , 2004, Pages 38-47

  Ausschnitt, Christopher P ^a   Cheng, Shaunee Y ^b  

^a IBM RESEARCH   (United States)

^b IMEC Silicon Proc/Device TD ^*  (Belgium)

Author keywords

Critical dimension; Lithography; Process control; Process window metrology; Scatterometry

Indexed keywords

CRITICAL DIMENSIONS; EFFECTIVE DEFOCUS (EDF); PROCESS-WINDOW METROLOGY; SCATTEROMETRY;

ATOMIC FORCE MICROSCOPY; CALIBRATION; COMPUTER SIMULATION; DATA REDUCTION; IMAGING SYSTEMS; LITHOGRAPHY; MATHEMATICAL MODELS; MEASUREMENT THEORY; SCANNING ELECTRON MICROSCOPY;

PROCESS CONTROL;

EID: 2942696343     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.540914     Document Type: Conference Paper

References (11)

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11. op. cit. 8