1-Gb/s 80-dBΩ fully differential CMOS transimpedance amplifier in multichip on oxide technology for optical interconnects

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 6, 2004, Pages 971-974

  Park, Sung Min ^a,b   Lee, Jaeseo ^c   Yoo, Hoi Jun ^c  

^a University of Ulsan   (South Korea)

^b Ewha Womans University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Multichip on oxide (MCO); Optical interconnects; Oxidized phosphorous silicon (OPS); Regulated cascode; Switching noise; Transimpedance amplifier (TIA)

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; BIT ERROR RATE; CMOS INTEGRATED CIRCUITS; DEMULTIPLEXING; MICROPROCESSOR CHIPS; PHOTODIODES; SPURIOUS SIGNAL NOISE; SWITCHING; VARIABLE FREQUENCY OSCILLATORS;

COMMON-MODE NOISES; DIGITAL DEMULTIPLEXERS; GIGABIT OPTICAL RECEIVERS; MULTICHIP MODULES (MCM);

OPTICAL INTERCONNECTS;

EID: 2942689655     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.827795     Document Type: Article

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