A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 5, 2001, Pages 769-776

  Kim, Helen H ^b   Chandrasekhar, S ^a,c   Burrus Jr , Charles A ^a,c   Bauman, Jon ^c  

^a IEEE

^b AraLight Inc   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

BiCMOS; Constant k filter; Emitter shunt peaking; OC 192; Receiver; Sensitivity; SONET; TIA; Transimpedance amplifier

Indexed keywords

BANDWIDTH; BIT ERROR RATE; FEEDBACK AMPLIFIERS; INTEGRATED CIRCUIT LAYOUT; OPTICAL COMMUNICATION; PHOTODIODES; SEMICONDUCTING SILICON; SENSITIVITY ANALYSIS; SIGNAL RECEIVERS; SIGNAL TO NOISE RATIO;

EMITTER SHUNT PEAKING; OPTICAL SENSITIVITY; SYNCHRONOUS OPTICAL NETWORK; TRANSIMPEDANCE AMPLIFIER;

CMOS INTEGRATED CIRCUITS;

EID: 0035335239     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.918914     Document Type: Article

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