A multichip on oxide of 1 Gb/s 80 dB fully-differential CMOS transimpedance amplifier for optical interconnect applications

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2002, Pages 80-81+447+67

  Lee, Jaeseo ^a   Song, Seong Jun ^a   Park, Sung Min ^a   Nam, Choong Mo ^a   Kwon, Young Se ^a   Yoo, Hoi Jun ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ENERGY DISSIPATION; FREQUENCY RESPONSE; MICROPROCESSOR CHIPS; MOSFET DEVICES; OPTICAL COMMUNICATION; PHOTODIODES; SIGNAL TO NOISE RATIO;

TRANSIMPEDANCE AMPLIFIER (TIA);

OPTICAL INTERCONNECTS;

EID: 0036116741     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Which features of an IC technology will benefit radio SOC?
2. High-performance planner inductor on tick oxidized porous silicon (OPS) substrate
3. A packaged low-noise high-speed regulated cascode transimpedance amplifier using 0.6 μm N-well CMOS technology
4. A 3-GHz 32-dB CMOS limiting amplifier for SONET OC-48 receivers