Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 2, 2004, Pages 95-101

  Marin, M ^a,b   Deen, M J ^b,c   De Murcia, M ^b   Llinares, P ^a   Vildeuil, J C ^a  

^a STMICROELECTRONICS   (France)

^b UNIV MONTPELLIER   (France)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC POTENTIAL; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; SUBSTRATES; TRANSCONDUCTANCE;

BODY BIASING; LOW FREQUENCY NOISE;

MOSFET DEVICES;

EID: 2942679172     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20040509     Document Type: Article

References (18)

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