Substrate bias dependence of the transconductance of deep submicron silicon nmosfets

Solid-State Electronics

Volumn 42, Issue 10, 1998, Pages 1827-1829

  Szelag, B ^a   Balestra, F ^a  

^a Lab Phys Composants S   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYOGENICS; FERMI LEVEL; SEMICONDUCTING SILICON; SUBSTRATES; TRANSCONDUCTANCE;

FERMI POTENTIAL; SUBSTRATE BIAS DEPENDENCE;

MOSFET DEVICES;

EID: 0032183727     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00152-X     Document Type: Article

References (5)

1. Baccarani, G. and Wordeman, M., IEEE TED, 1983, 30(10), 1295.
2. Balestra, F. and Guibaudo, G., Solid-State Electron., 1967, 37, 1994.
3. Guo, J. C., Chang, M. C., Hsu, C. Y. and Chung, S., IEEE TED, 1995, 42(2), 288.
4. Szelag, B., Balestra, F., Guibaudo, G. and Dutoit, M., J. Phys., 1996, iv, 61.
5. Atlas, version 4.0. SILVACO International, 1996.