Body bias dependence of 1/f noise in NMOS transistors from deep-subthreshold to strong inversion

IEEE Transactions on Electron Devices

Volumn 48, Issue 5, 2001, Pages 999-1001

  Park, N ^a   O, K K ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; SEMICONDUCTOR JUNCTIONS; SIGNAL NOISE MEASUREMENT; SPECTRUM ANALYZERS; SPURIOUS SIGNAL NOISE; THRESHOLD VOLTAGE;

BODY BIAS DEPENDENCE; BODY-TO-SOURCE JUNCTION; DEPLETION LAYER CAPACITANCE; DYNAMIC SPECTRUM ANALYZER; NMOS TRANSISTORS;

MOSFET DEVICES;

EID: 0035336163     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.918249     Document Type: Article

References (21)