Gate-controlled lateral PNP BJT: Characteristics, modeling and circuit applications

IEEE Transactions on Electron Devices

Volumn 44, Issue 1, 1997, Pages 118-128

  Yan, Zhixin ^a   Jamal Deen, M ^b   Malhi, Duljit S ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b Rockwell Semiconductor Systems ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRODES; GAIN MEASUREMENT; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; MIXER CIRCUITS; MOBILE TELECOMMUNICATION SYSTEMS; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE; VLSI CIRCUITS;

BIPOLAR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (BICMOS); GATE CONTROLLED LATERAL PNP BIPOLAR JUNCTION TRANSISTOR; SOFTWARE PACKAGE PSPICE;

BIPOLAR TRANSISTORS;

EID: 0030819754     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.555443     Document Type: Article

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