Effect of the forward biasing the source-substrate junction in n-metal-oxide-semiconductor transistors for possible low power complementary metal-oxide-semiconductor integrated circuits' applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 1812-1817

  De La Hidalga W , F J ^a,b   Deen, M J ^a   Gutierrez D , E A ^b   Balestra, F ^c  

^a SIMON FRASER UNIVERSITY   (Canada)

^b INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^c Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001255301     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590092     Document Type: Article

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