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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 3 B, 2002, Pages

The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake

(7) Lee, Min Hung a Chen, Kuan Fu a Lai, Chang Chi a Liu, Chee Wee a Pai, Woei Wu a Chen, Miin Jang a Lin, Ching Fuh a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

Electroluminescence; Electron hole plasma recombination; External quantum efficiency; Metal oxide silicon diode; Roughness

Indexed keywords

ELECTROLUMINESCENCE; GATES (TRANSISTOR); INTERFACES (MATERIALS); LIGHT EMISSION; OXIDATION; PHONONS; PLASMAS; QUANTUM EFFICIENCY; SCATTERING;

METAL OXIDE SILICON DIODES;

LIGHT EMITTING DIODES;

EID: 0037088514 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l326 Document Type: Article

Times cited : (10)

References (18)

1
- 0029959624
- (1996) Nature , vol.384 , pp. 338
- Hirschman, K.D.¹ Tysbekov, L.² Duttagupta, S.P.³ Fauchet, P.M.⁴

2
- 5744220772
- Washington D.C.
- (1999) Int. Electron Devices Meet. Tech. Dig. , pp. 749
- Liu, C.W.¹ Lee, M.H.² Lin, C.F.³ Lin, I.C.⁴ Liu, W.T.⁵ Lin, H.H.⁶

3
- 0027615013
- (1993) Sens. & Actuat. A , vol.37-38 , pp. 527
- Kramer, J.¹ Seitz, P.² Steigmeier, E.F.³ Auderset, H.⁴ Delley, B.⁵

4
- 0035826195
- (2001) Nature , vol.410 , pp. 192
- Ng, W.L.¹ Lourenco, M.A.² Gwilliam, R.M.³ Ledain, S.⁴ Shao, G.⁵ Homewood, K.P.⁶

5
- 0033337914
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 614
- Snymandu, L.W.¹ Plessis, M.² Seevinck, E.³ Aharoni, H.⁴

6
- 0009774040
- (2000) Appl. Phys. Lett. , vol.77 , pp. 4347
- Liu, C.W.¹ Lee, M.H.² Chang, S.T.³ Liu, W.T.⁴ Chen, M.-J.⁵ Lin, C.-F.⁶

7
- 0033729141
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 307
- Liu, C.W.¹ Liu, W.T.² Lee, M.H.³ Kuo, W.S.⁴ Hsu, B.-C.⁵

8
- 0035809536
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1397
- Liu, C.W.¹ Lin, C.-H.² Lee, M.H.³ Chang, S.T.⁴ Liu, Y.H.⁵ Chen, M.-J.⁶ Lin, C.-F.⁷

9
- 0000720021
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1111
- Liu, C.W.¹ Chen, M.-J.² Lin, I.C.³ Lee, M.H.⁴ Lin, C.-F.⁵

10
- 0034504101
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 601
- Liu, C.W.¹ Lee, M.H.² Chen, M.-J.³ Lin, C.-F.⁴ Chern, M.Y.⁵

11
- 51249164998
- (1993) J. Electronic Mater. , vol.22 , pp. 335
- Xu, X.¹ Kuehn, R.T.² Ozturk, M.C.³ Wortman, J.J.⁴ Nemanich, R.J.⁵ Harris, G.S.⁶ Maher, D.M.⁷

12
- 0020140027
- (1982) J. Electrochem. Soc. , vol.129 , pp. 1300
- Smith, F.W.¹ Ghidini, G.²

13
- 0000025964
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1495
- Tsai, V.¹ Wang, X.-S.² Williams, E.D.³ Schneir, J.⁴ Dixson, R.⁵

14
- 0033895145
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 34
- Pirovano, A.¹ Lacaita, A.L.² Ghidini, G.³ Tallarida, G.⁴

15
- 0009751201
- Hawaii
- (2000) VLSI Tech. Dig. , pp. 198
- Lee, W.-C.¹ Hu, C.²

16
- 0003514380
- Cambridge University Press, Cambridge
- (1998) Fundamentals of Modern VLSI Devices , pp. 59
- Taur, Y.¹ Ning, T.H.²

17
- 0000720022
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1516
- Liu, C.W.¹ Lee, M.H.² Chen, M.-J.³ Lin, I.C.⁴ Lin, C.-F.⁵

18
- 4243525630
- San Francisco
- (1990) Int. Electron Devices Meet. Tech. Dig. , pp. 201
- Keeney, S.¹ Piccini, F.² Morelli, M.³ Mathewson, A.⁴ Lombardi, C.⁵ Bez, R.⁶ Ravazzi, L.⁷ Cantarelli, D.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.