Electronic properties of semiconducting silicides: Fundamentals and recent predictions

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 141-147

  Ivanenko, L I ^a   Shaposhnikov, V L ^a   Filonov, A B ^a   Krivosheeva, A V ^a   Borisenko, V E ^a   Migas, D B ^b   Miglio, L ^b   Behr, G ^c   Schumann, J ^c  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c IFW DRESDEN   (Germany)

Author keywords

Electronic properties; Semiconducting silicides; Transport properties

Indexed keywords

BARIUM COMPOUNDS; CALCIUM COMPOUNDS; COMPRESSIBILITY; COMPUTER SIMULATION; IRON COMPOUNDS; LATTICE CONSTANTS; OPTICAL PROPERTIES; OSMIUM COMPOUNDS; RUTHENIUM COMPOUNDS; SEMICONDUCTING SILICON; STRETCHING; TRANSPORT PROPERTIES;

COMPRESSED LATTICES; LATTICE DISTORTION; SEMICONDUCTING SILICIDES; TERNARIES;

ELECTRONIC PROPERTIES;

EID: 2942637928     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.088     Document Type: Conference Paper

References (37)

1. Borisenko V.E. Semiconducting Silicidies. 2000;348 Springer, Berlin.
2. Blaha P., Schwarz K., Madsen G.K.H., Krasnicka D., Luitz J. WIEN2K. 2001;Vienna Univ. of Technology, Karlheinz Schwarz. (Improved and updated Unix version of the original copyrighted WIEN-code, which was published by P. Blaha, K. Schwarz, P. Sorantin, S.B. Trickey, in Comput. Phys. Commun. 59, 399, 1990).
3. Blaha P., Schwarz K., Madsen G.K.H., Krasnicka D., Luitz J. WIEN2K. 2001;Vienna Univ. of Technology, Karlheinz Schwarz. (Improved and updated Unix version of the original copyrighted WIEN-code, which was published by P. Blaha, K. Schwarz, P. Sorantin, S.B. Trickey, in Comput. Phys. Commun. 59, 399, 1990).
4. Kresse G., Hafner J. Phys. Rev., B. 49:1994;14251 Phys. Rev., B. 54:1996;11169.
5. Kresse G., Hafner J. Phys. Rev., B. 49:1994;14251 Phys. Rev., B. 54:1996;11169.
6. Migas D.B., Miglio L., Shaposhnikov V.L., Borisenko V.E. Phys. Rev., B. 67:2003;205203.
7. Evers J. J. Solid State Chem. 32:1980;77.
8. Schäfer H., Janzou K.H., Weiss A. Angewandte Chemie International. edition 2:1963;393.
9. Evers J., Weiss A. Mater. Res. Bull. 9:1974;549.
10. Nakamura T., Suemasu T., Takakura K., Hasegawa F., Wakahara A., Imai M. Appl. Phys. Lett. 81:2002;1032.
11. Migas D.B., Miglio L., Shaposhnikov V.L., Borisenko V.E. Phys. Status Solidi. 231b:2002;171.
12. Migas D.B., Miglio L., Henrion W., Rebien M., Marabelli F., Cook B.A., Shaposhnikov V.L., Borisenko V.E. Phys. Rev., B. 64:2001;075208.
13. Massalski Th.B. Binary Alloy Phase Diagrams. 1990;3254 ASM International, OH.
14. Ivanenko L., Behr G., Spinella C.R., Borisenko V.E. J. Cryst. Growth. 236:2002;572. (Letter to the Editor).
15. Samsonov G.V., Vinitskii I.M. Handbook of Refractory Compounds. 1980;IFI/Plenum, New York.
16. Moroni E.G., Wolf W., Hafner J., Podloucky R. Phys. Rev., B. 59:1999;12860.
17. Migas D.B., Miglio L. Appl. Phys. Lett. 79:2001;2175.
18. Grimaldi M.G., Buongiorno C., Spinella C., Grilli E., Martinelli L., Gemelli M., Migas D.B., Miglio L., Fanciulli M. Phys. Rev., B. 66:2002;085319.
19. Martinelli L., Grilli E., Migas D.B., Miglio L., Marabelli F., Soci C., Geddo M., Grimaldi M.G., Spinella C. Phys. Rev., B. 66:2002;085320.
20. Krivosheeva A.V., Shaposhnikov V.L., Krivosheev A.E., Filonov A.B., Borisenko V.E. Semiconductors. 37:2003;402.
21. Krivosheeva A.V., Kholod A.N., Shaposhnikov V.L., Krivosheev A.E., Borisenko V.E. Semiconductors. 36:2002;496.
22. Ridley B.K. Quantum Processes in Semiconductors. 1982;Clarendon Press, Oxford.
23. Ivanenko L., Lange H., Heinrich A. Borisenko V.E. Semiconducting Silicides. 2000;243 Springer, Berlin.
24. Brehme S., Ivanenko L., Tomm Y., Reinsperger G.-U., Stauss P., Lange H. Tung R., Maex K., Pellegrini P., Allen L. Silicide Thin Film-Fabrication, Properties, and Applications. Materials Research Society Symposium Proceedings. 402:1996;355 MRS, Pittsburgh, Pennsylvania.
25. Behr G., Werner J., Weise G., Heinrich A., Burkov A., Gladun C. Phys. Status Solidi. 160a:1997;549.
26. Filonov A.B., Tralle I.E., Migas D.B., Shaposhnikov V.L., Borisenko V.E. Phys. Status Solidi. 203b:1997;183.
27. Ivanenko L., Shaposhnikov V.L., Filonov A.B., Migas D.B., Behr G., Schumann J., Vinzelberg H., Borisenko V.E. Microelectron. Eng. 64:2002;225.
28. Gottlieb U., Lambert-Andron B., Nava F., Affronte M., Laborde O., Rouault A., Madar R. J. Appl. Phys. 78:1995;3902.
29. Ali I., Muret P., Haydar A. Semicond. Sci. Technol. 16:2001;966.
30. Souptel D., Behr G., Ivanenko L., Vinzelberg H., Schumann J. J. Cryst. Growth. 244:2002;296.
31. L. Ivanenko, A. Filonov, V. Shaposhnikov, G. Behr, D. Souptel, J. Schumann, H. Vinzelberg, A. Plotnikov, V. Borisenko, Microelectron. Eng. (in press).
32. 3 single crystals. Appl. Surf. Sci. 73:1993;243.
33. Vining C.B., Allevato C.E. Rowe D.M. Proceedings of the 10th International Conference on Thermoelectrics. 1991;167 Babrow Press, Cardiff.
34. Heinrich J., Grießmann H., Behr G., Ivanenko L., Schumann J., Vinzelberg H. Thin Solid Films. 381:2001;287.
35. Pitschke W., Hofman D., Schumann J., Kleint C.A., Heinrich A., Burkov T. J. Appl. Phys. 89:2001;3229.
36. Thomas J., Hofman D., Kleint C., Schumann J., Wetzig K. Anal. Bioanal. Chem. 374:2002;695.
37. L. Ivanenko, A. Filonov, V. Shaposhnikov, A. Krivosheev, G. Behr, D. Souptel, J. Schumann, H. Vinzelberg, S. Paschen, A. Bentien, V. Borisenko, I.E.E.E. (in press).