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Semiconductor Science and Technology

Volumn 16, Issue 12, 2001, Pages 966-971

Electrical transport properties of semiconducting rhenium silicide thin films on silicon (111)

(3) Ali, I a,c Muret, P a Haydar, A b

a CNRS (France)

b DAMASCUS UNIVERSITY (Syrian Arab Republic)

c Higher Institute for Applied Sciences and Technology Syria (Syrian Arab Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ENERGY GAP; HALL EFFECT; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRICAL TRANSPORT PROPERTIES; SEMICONDUCTING RHENIUM SILICIDE THIN FILMS;

THIN FILMS;

EID: 0035667670 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/12/303 Document Type: Article

Times cited : (10)

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