A 0.25μm CMOS based 70 V smart power technology with deep trench for high-voltage isolation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 459-462

  Parthasarathy, V ^a   Zhu, R ^a   Khemka, V ^a   Roggenbauer, T ^a   Bose, A ^a   Hui, P ^a   Rodriquez, P ^a   Nivison, J ^a   Collins, D ^a   Wu, Z ^a   Puchades, I ^a   Butner, M ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; LITHOGRAPHY; POWER ELECTRONICS; SCANNING ELECTRON MICROSCOPY;

SMART POWER TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 0036923560     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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