Novel FIB-TEM preparation methods for semiconductor device characterisation and failure analysis

Microscopy of Semiconducting Materials 2003

Volumn , Issue , 2018, Pages 617-620

  Donnet, D M ^a   De Veirman, A E M ^a   Otterloo, B ^a   Roberts, H ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLOGRAPHY; IMAGE ENHANCEMENT; SEMICONDUCTOR DOPING;

3-DIMENSIONAL; DEVICE CHARACTERISATION; DOPANT PROFILE; LIFT-OUT TECHNIQUES; PREPARATION METHOD; TEM SAMPLE PREPARATION;

SEMICONDUCTOR DEVICES;

EID: 2942571903     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1201/9781351074636     Document Type: Chapter

References (7)

1. De Veirman AEM 2003 Accepted for publication Mat. Sci. Eng. B
2. Muehle U, Lenk A, Lehmann M and Lichte H 2002 Proc. 28th Int. Symp. for Testing and Failure Analysis P 39
3. Li J, McCartney M R and Smith D J 2003 Ultramicroscopy 94 149
4. Ohnishi T, Koike H, Ishitani T, Tomimatsu S, Umemura K and Kamino T 1999 Proc 25th Int. Symp. for Testing and Failure Analysis P 449
5. Rau W D, Schwander P, Bauman F H, Höppner W and Ourmazd A 1999 Phys. Rev. Lett. 82, 2614
6. Thesen A E, Frost B G and Joy D C 2003 Ultramicroscopy 94, 277
7. th Symp. for Testing and Failure Analysis p 765