AFM measurement of initially grown GaN layer on GaAs substrate

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 271-275

  Tanaka, Hidenao ^a   Nakadaira, Atsushi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; GRAIN SIZE AND SHAPE; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SUPERSATURATION; SURFACE ROUGHNESS;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0034507843     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00698-9     Document Type: Article

References (5)

1. Mizuta M., Fujieda S., Matsumoto Y., Kawamura T. Jpn. J. Appl. Phys. 25:1986;L945.
2. Nakadaira A., Tanaka H. J. Electron. Mater. 26:1997;320.
3. Nakadaira A., Tanaka H. J. Crystal Growth. 189/190:1998;411.
4. Tanaka H., Nakadaira A. Onabe K., Hiramatsu K., Itaya K., Nakano Y. Proceedings of the Second International Symposium on Blue Laser and Light Emitting Diodes. 1998;669 Ohmsha, Tokyo.
5. Tanaka H., Nakadaira A. IEICE Trans. Electron. E83-C-4:2000;585.