The effect of hydrogen species on the electronic properties of nc-Si:H prepared in a triode PECVD system

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 891-894

  Chen, Kunji ^a   Qin, Hua ^a   Huang, Xinfan ^a   Ikuta, Kazuyuki ^b,c   Matsuda, Akihisa ^c   Tanaka, Kazunobu ^b  

^a NANJING UNIVERSITY   (China)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRONIC PROPERTIES; HYDROGEN; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PHOTOCONDUCTIVITY; PLASMAS;

DILUTION RATIO; DRIFT MOBILITY; HYDROGEN DILUTED SILANE PLASMA; TRIODE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING SILICON;

EID: 0030563576     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00077-4     Document Type: Article

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