Growth and electrical properties of compositionally graded Pb(Zr xTi1-x)O3 thin films on PbZrO3 buffered Pt/Ti/SiO2/Si substrates

Journal of Crystal Growth

Volumn 267, Issue 1-2, 2004, Pages 117-122

  Tang, X G ^a   Wang, J ^a   Chan, H L W ^a   Ding, A L ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

A1. Characterization; B1. Pb(Zr,Ti)O3; B1. Perovskites; B2. Ferroelectric materials

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; GROWTH (MATERIALS); LEAD COMPOUNDS; MORPHOLOGY; PLATINUM; SCANNING ELECTRON MICROSCOPY; SILICA; SOL-GELS; SUBSTRATES; TITANIUM; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC MATERIAL; PB(ZR,TI)O3;

THIN FILMS;

EID: 2942519875     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.03.013     Document Type: Article

References (28)

1. Cattan E., Velu G., Jaber B., Remiens D., Thierry B. Appl. Phys. Lett. 70:1997;1718.
2. Liu W., Koo J.S., Zhu W. Thin Solid Films. 371:2000;254.
3. Ignatiev A., Xu Y.Q., Wu N.J., Liu D. Mater. Sci. Eng. B56:1998;191.
4. Xu Y.Q., Wu N.J., Ignatiev A. J. Appl. Phys. 88:2000;1004.
5. Velu G., Haccart T., Remiens D. Intergr. Ferroelectr. 23:1999;1.
6. Tang X.G., Chan H.L.W., Ding A.L. Solid State Commun. 127:2003;625.
7. Adikary S.U., Ding A.L., Chan H.L.W. Appl. Phys. A. 75:2002;597.
8. Schubring N.W., Mantese J.V., Micheli A.L., Catalan A.B., Lopez R.J. Phys. Rev. Lett. 68:1992;1788.
9. Chen Z., Arita K., Lim M., De Araujo C.A.P. Integr. Ferroelectr. 24:1999;181.
10. Bao D.H., Wakiya N., Shinozaki K., Mizutani N., Yao X. J. Appl. Phys. 90:2001;506.
11. Jin F., Auner G.W., Naik R., Schubring N.W., Mantese J.V., Catalan A.B., Micheli A.L. Appl. Phys. Lett. 73:1998;2838.
12. Meng X.J., Cheng J.G., Li B., Guo S.L., Ye H.J., Chu J.H. J. Crystal Growth. 208:2000;541.
13. Tang X.G., Chan H.L.W., Ding A.L., Yin Q.R. Surf. Coat. Technol. 161:2002;169.
14. Garn L.E., Sharp E.J. J. Appl. Phys. 53:1982;8974.
15. Cross J.S., Fujiki M., Tsukada M., Kotaka Y., Goto Y. J. Mater. Res. 14:1999;4366.
16. Brook K.G., Reaney I.M., Klissurska R., Huang Y., Bursill L., Setter N. J. Mater. Res. 9:1994;2540.
17. Chen S.Y., Chen I.W. J. Am. Ceram. Soc. 77:1994;2332.
18. Huang Z., Zhang Q., Whatmore R.W. J. Appl. Phys. 85:1999;7355.
19. Kong L.B., Ma J. Appl. Phys. Lett. 77:2000;2584.
20. Grossmann M., Lohse O., Bolten D., Boettger U., Schneller T., Waser R. Appl. Phys. Lett. 80:2002;1427.
21. Zhou C., Newns D.M. J. Appl. Phys. 82:1997;3081.
22. Tu J.J., Homes C.C., Strongin M. Phys. Rev. Lett. 90:2003;017402.
23. Tang X.G., Wang J., Zhang Y.W., Chan H.L.W., Ding A.L., Choy C.L. Appl. Phys. A. 78:2004;1205.
24. Jin H.Z., Zhu J., Ehrhart P., Fitsilis F., Jia C.L., Regnery S., Urban K., Waser R. Thin Solid Films. 429:2003;282.
25. Ploss B., Ploss B., Shin F.G., Chan H.L.W., Choy C.L. Appl. Phys. Lett. 76:2000;2776.
26. Wang B., Chan H.L.W., Kwok K.W., Ploss B., Choy C.L., Tong K.Y. J. Eur. Ceram. Soc. 21:2001;1589.
27. Chang C.C., Tang C.S. J. Appl. Phys. 87:2000;3931.
28. Whatmore W.R., Patel A., Shorrocks N.M., Ainger F.W. Ferroelectrics. 104:1990;269.