Processing effects on the microstructure and ferroelectric propertis of Pb(Zr,Ti)O3 thin films prepared by sol-gel process

Surface and Coatings Technology

Volumn 161, Issue 2-3, 2002, Pages 169-173

  Tang, X G ^a,b   Chan, H L W ^a   Ding, A L ^b   Yin, Q R ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Dielectric property; Ferroelectric property; Heat decompose temperature; PZT thin films; Sol gel

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; ENERGY DISSIPATION; LEAD COMPOUNDS; MICROSTRUCTURE; PERMITTIVITY; SOL-GELS; X RAY DIFFRACTION;

SURFACE MORPHOLOGIES;

FERROELECTRIC THIN FILMS;

FILM; LEAD ALLOY; MICROSTRUCTURE; PHYSICAL PROPERTY; SOL-GEL PROCESS;

EID: 0037010574     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00520-0     Document Type: Article

References (16)