Two stages of post-growth recovery in molecular beam epitaxy: A surface X-ray diffraction study

Surface Science

Volumn 560, Issue 1-3, 2004, Pages 88-102

  Kaganer, Vladimir M ^a   Braun, Wolfgang ^a   Jenichen, Bernd ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Epitaxy; Gallium arsenide; Models of surface kinetics; Surface structure, morphology, roughness, and topography; X ray scattering, diffraction, and reflection

Indexed keywords

ARSENIC; DEPOSITION; EPITAXIAL GROWTH; KINETIC THEORY OF GASES; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; MORPHOLOGY; PRESSURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE CHEMISTRY; SURFACE ROUGHNESS; SURFACE STRUCTURE; X RAY DIFFRACTION;

DIFFRACTION AND REFLECTION; MODELS OF SURFACE KINETICS; ROUGHNESS AND TOPOGRAPHY; X-RAY SCATTERING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 2942516229     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.04.016     Document Type: Article

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