Adatom concentration on GaAs(001) during MBE annealing

Surface Science

Volumn 350, Issue 1-3, 1996, Pages 254-258

  Johnson, M D ^a,c   Leung, K T ^a   Birch, A ^a   Orr, B G ^a   Tersoff, J ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

Author keywords

Arsenic; Epitaxy; Equilibrium thermodynamics and statistical mechanics; Evaporation and sublimation; Gallium; Gallium arsenide; Low index single crystal surfaces; Models of surface chemical reactions; Models of surface kinetics; Molecular beam epitaxy

Indexed keywords

ANNEALING; ARSENIC; ATOMS; COOLING; GALLIUM; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STATISTICAL MECHANICS; SURFACES; THERMODYNAMICS;

ADATOMS; CHEMICAL POTENTIAL; LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE CHEMICAL REACTION MODELS; SURFACE KINETICS MODEL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030129051     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01110-2     Document Type: Article

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