Highly reliable PVD/ALD/PVD stacked barrier metal structure for 45nm-node copper dual-damascene interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 6-8

  Higashi, K ^a   Yamaguchi, H ^a   Omoto, S ^a   Sakata, A ^a   Katata, T ^a   Matsunaga, N ^a   Shibata, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER SYSTEM INTERCONNECTION; ELECTRIC RESISTANCE; ELECTRIC WIRING; ELECTROPLATING; ELECTROPLATING SOLUTIONS; METAL ANALYSIS; NUCLEATION; PHYSICAL VAPOR DEPOSITION; STRESS ANALYSIS; THICKNESS MEASUREMENT;

ATOMIC LAYER DEPOSITION (ALD); BARRIER METALS; COPPER INTERCONNECTS; ELECTROMIGRATION (EM); METAL STRUCTURES;

COPPER METALLURGY;

EID: 8644290148     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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