Charge-based analytical current model for asymmetric double-gate MOSFETs

Journal of the Korean Physical Society

Volumn 47, Issue SUPPL. 3, 2005, Pages

  Park, Ji Sun ^a   Lee, Seungjun ^a   Jhee, Yoonkyoo ^a   Shin, Hyungsoon ^a  

^a Ewha Womans University   (South Korea)

Author keywords

Asymmetric; Current model; Double gate MOSFETs; Inversion layer; Semiconductor device modeling

Indexed keywords

EID: 29344459263     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (9)

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