Surface and interface properties of PdCr/SiC Schottky diode gas sensor annealed at 425°C

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2209-2214

  Chen, Liang Yu ^a   Hunter, Gary W ^a   Neudeck, Philip G ^a   Knight, Dak ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; PALLADIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

PALLADIUM SILICIDES;

CHEMICAL SENSORS;

EID: 0032303272     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00217-2     Document Type: Article

References (6)

1. Hunter, G. W., Neudeck, P. G., Chen, L.-Y., Knight, D., Liu, C. C. and Wu, Q. H., 31st AIAA/ASME/ SAE/ASEE Joint Propulsion Conference and Exhibit, San Diego, CA, July 10-12, 1995, AIAA Paper 95-2647.
2. Chen, L.-Y., Hunter, G. W., Neudeck, P. G., Knight, D., Petit, J. and Bansal, G., The Annealing Effects on Electronic and Interfacial Properties of Pd/6H-SiC Schottky Diode Gas Sensors, J. Electrochem. Soc. (to be submitted).
3. Chen, L.-Y., Hunter, G. W., Neudeck, P. G., Bansal, G., Petit, J., Knight, D., Liu, C. C. and Wu, Q. H., Electronic and Interfacial Properties of Pd/6H-SiC Schottky Diode Gas Sensors presented at the Third International High Temperature and Electronics Conference, Albuquerue, NM, 1996.
4. Hunter, G. W., Neudeck, P. G., Chen, L.-Y., Knight, D., Liu, C. C. and Wu, Q. H., SiC-Based Schottky Diode Gas Sensors, presented at International Conference on SiC, III-Nitrides and Related Materials, Stockholm, Sweden, September, 1997.
5. Bermudez, V. M., Appl. Surf. Sci., 1983, 17, 12-2.
6. Zeller, M. V., Bellina, J., Saha, N., Filar, J., Hargraeves, J. and Will, H., Mater. Res. Soc. Symp. Proc., 1987, 97.