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Volumn 2, Issue , 2002, Pages 425-430

Channel-carrier mobility parameters for 4H SiC MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS; SILICON CARBIDE;

EID: 29244479930     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003290     Document Type: Conference Paper
Times cited : (6)

References (20)
  • 2
    • 0035310635 scopus 로고    scopus 로고
    • Improved inversion channel mobility for 4HSiC MOSFETs following high temperature anneals in nitric oxide
    • G. Y. Chung et al., "Improved inversion channel mobility for 4HSiC MOSFETs following high temperature anneals in nitric oxide, "IEEE Elec. Dev. Lett., vol. 22, pp. 176, 2001.
    • (2001) IEEE Elec. Dev. Lett. , vol.22 , pp. 176
    • Chung, G.Y.1
  • 4
    • 0024105667 scopus 로고
    • A physically based mobility model for numerical simulation of nonplanar devices
    • C. L ombardi,S. Manzini,A. Saporito,M. Vanzi A physically based mobility model for numerical simulation of nonplanar devices IEEE Trans. On Computer-Aided Design 7 no. 11 1164-1171,1988.
    • (1988) IEEE Trans. on Computer-Aided Design , vol.7 , Issue.11 , pp. 1164-1171
    • Lombardi, C.1    Manzini, S.2    Saporito, A.3    Vanzi, M.4
  • 5
    • 0009509593 scopus 로고
    • Carrier mobilities in silicon empirically related to doping and field
    • D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field, "Proc. IEEE, vol. 52, pp. 2192-2193, 1967.
    • (1967) Proc. IEEE , vol.52 , pp. 2192-2193
    • Caughey, D.M.1    Thomas, R.E.2
  • 6
    • 84906668535 scopus 로고    scopus 로고
    • Tma medici two-dimensional device simulation program ver. 2.3
    • Technology Modelling A ssociates Inc
    • Technology Modelling A ssociates, Inc., TMA MEDICI Two-Dimensional Device Simulation Program Ver. 2.3, MEDICI User's Manual, vol. 1, 1997.
    • (1997) MEDICI User's Manual , vol.1
  • 7
    • 49549126543 scopus 로고
    • Electron scattering in silico n inversion layers by oxide and surface roughness
    • A. Hartstein, T. H. Ning, and A. B. Fowler, "Electron scattering in silico n inversion layers by oxide and surface roughness, "Surface Sci., vol. 58, pp. 178-181, 1976.
    • (1976) Surface Sci , vol.58 , pp. 178-181
    • Hartstein, A.1    Ning, T.H.2    Fowler, A.B.3
  • 10
    • 0000257001 scopus 로고    scopus 로고
    • Characterization of structural a nd electrical properties in sic by raman spectroscopy
    • S. Nakashima and H. Harima, "Characterization of structural a nd electrical properties in SiC by Raman spectroscopy, "in Inst. Phys. Conf. Ser., pp. 269-272, 1996.
    • (1996) Inst. Phys. Conf. Ser , pp. 269-272
    • Nakashima, S.1    Harima, H.2
  • 11
    • 0031648147 scopus 로고    scopus 로고
    • Calculation of the anisotropy of the hall mobility in n-type 4h-And 6h-sic
    • T. Kinoshita, K. M. Itoh, J. Muto, M. Schadt, G. Pensl, and K. Takeda, "Calculation of the anisotropy of the Hall mobility in n-type 4H-And 6H-SiC, "Mater. Sci. Forum, vol. 264-268, pp. 295-298, 1998.
    • (1998) Mater. Sci. Forum , vol.264-268 , pp. 295-298
    • Kinoshita, T.1    Itoh, K.M.2    Muto, J.3    Schadt, M.4    Pensl, G.5    Takeda, K.6
  • 12
    • 0035395786 scopus 로고    scopus 로고
    • Electron mobility models for 4h, 6h, and 3c sic
    • M. Roschke and F. Schwierz, "Electron mobility models for 4H, 6H, and 3C SiC, "IEEE Trans. Electron Devices, vol. 48, no. 7, pp. 1442-1447, 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.7 , pp. 1442-1447
    • Roschke, M.1    Schwierz, F.2
  • 13
    • 0019048875 scopus 로고
    • Electron mobility in inversion and accumu lation layers on thermally oxidized silicon surfaces
    • S. C. Sun and J. D. Plummer, "Electron mobility in inversion and accumu lation layers on thermally oxidized silicon surfaces, "IEEE Trans. Electron Devices, vol. ED-27, pp. 1497-1508, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1497-1508
    • Sun, S.C.1    Plummer, J.D.2
  • 14
    • 0033886911 scopus 로고    scopus 로고
    • Measurement of high-field electron transport in silicon carbide
    • I. A. Khan and J. A. Cooper, "Measurement of high-field electron transport in silicon carbide, "IEEE Trans. Electron Devices, vol. 47, pp. 269-273, 2000.
    • (2000) IEEE Trans. Electron Devices , vol.47 , pp. 269-273
    • Khan, I.A.1    Cooper, J.A.2
  • 15
    • 0035445555 scopus 로고    scopus 로고
    • Effect of interface states on electron transp ort in 4h-sic inversion layers
    • E. Arnold and D. Alok, "Effect of interface states on electron transp ort in 4H-SiC inversion layers, "IEEE Trans. Electron Devices, vol. 48, pp. 1870-1877, 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 1870-1877
    • Arnold, E.1    Alok, D.2
  • 17
    • 0013456857 scopus 로고
    • Effective carrier mobility in surface space charge layers
    • J. Schrieffer, "Effective carrier mobility in surface space charge layers, "Phys. Rev., vol. 97, pp. 641-646, 1955.
    • (1955) Phys. Rev. , vol.97 , pp. 641-646
    • Schrieffer, J.1
  • 19
    • 0023998758 scopus 로고
    • New method for the extraction of mosfet parameters
    • G. Ghibaudo, "New method for the extraction of MOSFET parameters, "Electron. Lett., vol. 24, pp. 543-545, 1988.
    • (1988) Electron. Lett. , vol.24 , pp. 543-545
    • Ghibaudo, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.