Experimental determination of electron drift velocity in 4H-SiC p+-n-n+ avalanche diodes

IEEE Electron Device Letters

Volumn 21, Issue 10, 2000, Pages 485-487

  Vassilevski, Konstantin V ^a   Zekentes, Kontantinos ^a   Zorenko, Alexander V ^b   Romanov, Leonid P ^c  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b State Scientific and Research Institute Orion   (Ukraine)

^c Svetlana Electronpribor   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ENERGY DISSIPATION; ENERGY GAP; HEAT RESISTANCE; SILICON CARBIDE;

ELECTRON SATURATED DRIFT VELOCITY; WIDE BAND GAP SEMICONDUCTORS;

AVALANCHE DIODES;

EID: 0034297469     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.870609     Document Type: Article

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