Structure and passivation effects of mono- and dihydrogen complexes in GaAsyN1-y alloys

Physical Review Letters

Volumn 89, Issue 21, 2002, Pages 2164011-2164014

  Amore Bonapasta, Aldo ^a   Filippone, F ^a   Giannozzi, P ^b   Capizzi, M ^c   Polimeni, A ^c  

^a CNR   (Italy)

^b INFM   (Italy)

^c UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPLEXATION; DOPING (ADDITIVES); HYDROGEN; HYDROGENATION; PASSIVATION; PROBABILITY DENSITY FUNCTION;

BAND GAP;

GALLIUM ALLOYS;

EID: 0037132266     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. See, e.g., Hydrogen in Semiconductors, edited by J.I. Pankove and N.M. Johnson, Semiconductors and Semimetals (Academic, New York, 1991), Vol. 34.
2. For a review, see I.A. Buyanova, W.M. Chen, and B. Monemar, MRS Internat J. Nitride Semicond. Res. 6, 2 (2001).
3. G. Baldassarri Höger von Högersthal, M. Bissiri, A. Polimeni, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel, Appl. Phys. Lett. 78, 3472 (2001).
4. M. Bissiri et al. (private communication).
5. Results concerning hydrogenated Ga(PN) have been reported in a paper published after the submission of the present work A. Janotti, S.B. Zhang, and Su-Huai Wei, Phys. Rev. Lett. 88, 125506 (2002).
6. A. Amore Bonapasta and P. Giannozzi, Phys. Rev. Lett. 84, 3923 (2000).
7. C.G. Van de Walle, S. Limpijumnong, and J. Neugebauer, Phys. Rev. B 63, 245205 (2001).
8. A. Fara, F. Bernardini, and V. Fiorentini, J. Appl. Phys. 85, 2001 (1999).
9. R. Stumpf, X. Gonze, and M. Scheffler, Research Report No. 1, Fritz-Haber-Institut, Berlin (FRG), 1990.
10. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
11. A. Amore Bonapasta and M. Capizzi, Phys. Rev. B 61, 8180 (2000).
12. M. Stavola (private communication).
13. S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, and H. Temkin, Appl. Phys. Lett. 72, 1857 (1998).