Single carrier localization in InXGa1-xAs 1-yNy investigated by magnetophotoluminescence

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2295-2297

  Polimeni, A ^a   Masia, F ^a   Vinattieri, A ^b   Von Högersthal, G Baldassarri Höger ^a   Capizzi, M ^a  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b UNIVERSITY OF FLORENCE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CURVE FITTING; EXCITONS; HETEROJUNCTIONS; IONIZATION; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SOLAR CELLS; STRAIN;

DIAMAGNETIC SHIFTS; EMISSION ENERGY; MAGNETOPHOTOLUMINESCENCE; PHOTOLUMINESCENCE (PL) SPECTRA; RADIATIVE RECOMBINATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 2142647875     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1688003     Document Type: Article

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