Influence of annealing on the 1.5 μm light emission of Er-doped ZnO thin films and its crystal quality

Journal of Materials Research

Volumn 20, Issue 9, 2005, Pages 2578-2582

  Ishikawa, Yukari ^a   Okamoto, Mitsuhiro ^a   Tanaka, Shigeru ^a   Nezaki, Dai ^a   Shibata, N ^a  

^a JAPAN FINE CERAMICS CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ERBIUM; LIGHT EMISSION; PHOTOLUMINESCENCE; POLYCRYSTALS; SINGLE CRYSTALS; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURE; CRYSTAL QUALITY; X RAY DIFFRACTION MEASUREMENT;

ZINC OXIDE;

EID: 29144442410     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0323     Document Type: Article

References (18)

1. A. Polman: Erbium implanted thin film photonic materials. J. Appl. Phys. 82, 1 (1997).
2. S. Lombardo, S.U. Campisano, G.N. van den Hoven, A. Cacciato, and A. Polman: Room-temperature luminescence from Er-implanted semi-insulating polycrystalline silicon. Appl. Phys. Lett. 63, 1942 (1993).
3. R. Serna, J.H. Shin, M. Lohmeier, E. Vlieg, A. Polman, and P.F.A. Alkemade: Incorporation and optical activation of erbium in silicon using molecular beato epitaxy, J. Appl. Phys. 79, 2658 (1996).
4. M. Matsuoka and S. Tohno: 1.54 μm photoluminescence of in situ erbium-oxygen co-doped silicon films grown by ion-beam epitaxy. J. Appl. Phys. 78, 2751 (1995).
5. 3+ luminescence from erbium-doped silicon:oxygen thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Appl. Phys. Lett. 72, 1092 (1998).
6. W-X. Ni, K.B. Joelsson, C-X. Du, I.A. Buyanova, G. Pozina, W.M. Chen, G.V. Hansson, B. Monemar, J. Cardenas, and B.G. Svensson: Er/O and Er/F doping during molecular beato epitaxial growth of Si layers for efficient 1.54 μm light emission. Appl. Phys. Lett. 70, 3383 (1997).
7. 3+. Appl. Phys. Lett. 71, 1198 (1997).
8. S. Komuro, S. Maruyama, T. Morikawa, X. Zhao, H. Isshiki, and Y. Aoyagi: Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablation. Appl. Phys. Lett. 69, 3896 (1996).
9. W.L. Ng, M.P. Temple, P.A. Childs, F. Wellhofer, and K.P. Homewood: Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation. Appl. Phys. Lett. 75, 97 (1999).
10. N. Mais, J.P. Reithmaier, A. Forchel, M. Kohls, L. Spanhel, and G. Muller: Er doped nanocrystalline ZnO planar waveguide structures for 1.55 μm amplifier applications. Appl. Phys. Lett. 75, 2005 (1999).
11. S. Komuro, T. Katsumata, T. Morikawa, X. Zhao, H. Isshiki, and Y. Aoyagi: 1.54 μm emission dynamics of erbium-doped zinc-oxide thin films. Appl. Phys. Lett. 76, 3935 (2000).
12. S. Komuro, T. Katsumata, T. Morikawa, X. Zhao, H. Isshiki, and Y. Aoyagi: Highly erbium-doped zinc-oxide thin film prepared by laser ablation and its 1.54 μm emission dynamics. J. Appl. Phys. 88, 7129 (2000).
13. Y. Ishikawa, M. Okamoto, and N. Shibata: Room temperature 1.54 μm light emission from Er-doped epitaxial ZnO thin film. J. Ceram. Soc. Jpn. 112, S1119 (2004).
14. K. Kondo, M. Harada, and N. Shibata: Epitaxial growth of ZnO/AlN heterostructures on sapphire and Si substrates. J. Ceram. Soc. Jpn. 110, 343 (2002).
15. M. Okamoto, Y. Ishikawa, K. Kondo, and N. Shibata: Photoluminescence of undoped and rare-earth-element doped ZnO thin films prepared by rf magnetron sputtering. J. Ceram. Soc. Jpn. 112, S1115 (2004).
16. Joint Committee of Powder Diffraction Standards (International Center for Diffraction Data, Swarthmore, PA, 1992), Powder Diffraction File, No. 36-1451.
17. S. Tanaka, Y. Ishikawa, M. Okamoto, D. Nezaki, and N. Shibata: Intense band-edge emission and structural characterization of zinc oxide thin film sputtered at low temperature. J. Am. Ceram. Soc. (submitted).
18. M. Ishii, S. Komuro, T. Morikawa and Y. Aoyagi: Local structure analysis of an optically active center in Er-doped ZnO thin film. J. Appl. Phys. 89, 3679 (2001).