Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

Applied Physics Letters

Volumn 70, Issue 25, 1997, Pages 3383-3385

  Ni, W X ^a   Joelsson, K B ^a   Du, C X ^a,c   Buyanova, I A ^a   Pozina, G ^a   Chen, W M ^a   Hansson, G V ^a   Monemar, B ^a   Cardenas, J ^b   Svensson, B G ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001597996     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119178     Document Type: Article

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