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Journal of the Ceramic Society of Japan

Volumn 110, Issue 1281, 2002, Pages 343-346

Epitaxial growth of ZnO/AlN heterostructures on sapphire and Si substrates

(3) Kondo, Kazuyuki a Harada, Masashi a Shibata, Noriyoshi a

a JAPAN FINE CERAMICS CENTER (Japan)

Author keywords

AlN; Epitaxial film; Interface; Molecular beam epitaxy; Sapphire; Si; SiC; Sputtering; ZnO

Indexed keywords

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

EPITAXIAL FILMS;

HETEROJUNCTIONS;

EID: 0036565146 PISSN: 09145400 EISSN: None Source Type: Journal
DOI: 10.2109/jcersj.110.343 Document Type: Article

Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.