Fabrication of v-groove gratings in InP by inductively coupled plasma etching with SiCl4/Ar

Semiconductor Science and Technology

Volumn 21, Issue 1, 2006, Pages

  Kennedy, K ^a   Groom, K M ^a   Hogg, R A ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DIFFRACTION GRATINGS; ETCHING; INDIUM COMPOUNDS; ION BOMBARDMENT; PHOSPHORUS COMPOUNDS;

MASK EROSION; PHOTORESIST MASK; V-GROOVE;

INDUCTIVELY COUPLED PLASMA;

EID: 29144439816     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/1/L01     Document Type: Article

References (12)

1. Stern M B and Liao P F 1983 J. Vac. Sci. Technol. B 1 1053-5
2. Fujiwara Y, Kikuchi K, Hashimoto M, Hatate H, Imai T, Takeda Y, Nakano H, Honda M, Tatsuta T and Tsuji O 1997 Japan. J. Appl. Phys. 136 7763-8
3. Etrillard J, Ossart P, Patriarche G, Juhel M, Bresse J F and Daguet C 1997 J. Vac. Sci. Technol. A 15 626-32 (part 1)
4. Shul R J, McClellan G B, Briggs R D, Rieger D J, Pearton S J, Abernathy C R, Lee J W, Constantine C and Barratt C 1997 J. Vac. Sci. Technol. A 15 633-7 (part 1)
5. Matsutani A, Koyama F and Iga K 1998 Japan. J. Appl. Phys. 137 6655-6
6. Matsutani A, Ohtsuki H, Muta S, Koyama F and Iga K 2001 Japan. J. Appl. Phys. 140 1528-9
7. Lee B T et al 1999 Semicond. Sci. Technol. 14 345-9
8. Streifer W et al 1975 IEEE J. Quantum Electron. 11 867-72
9. Faist J et al 1997 Appl. Phys. Lett. 70 2670-2
10. Capasso F et al 2002 IEEE J. Quantum Electron. 38 511-27
11. Wang J, Thompson D A and Simmons J G 1998 J. Electrochem. Soc. 145 2931-7
12. Charles P M 2002 US Patent 6335559 Hewlett-Packard Company