New types of unstable step-flow growth on Si(111)-(7×7) during molecular beam epitaxy: Scaling and universality

Physical Review Letters

Volumn 95, Issue 21, 2005, Pages

  Omi, Hiroo ^a   Homma, Yoshikazu ^a   Tonchev, Vesselin ^b   Pimpinelli, Alberto ^c  

^a NTT Basic Research Laboratories   (Japan)

^b INSTITUTE OF PHYSICAL CHEMISTRY   (Bulgaria)

^c UNIVERSITÉ BLAISE PASCAL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BUNCHING THEORY; HOMOEPITAXIAL GROWTH; SCALING ANALYSIS;

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; SILICON;

GROWTH (MATERIALS);

EID: 28944444199     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.95.216101     Document Type: Article

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