Step-bunching in SiGe layers and superlattices on Si (0 0 1)

Surface Science

Volumn 532-535, Issue , 2003, Pages 721-726

  Muhlberger M ^a   Schelling, C ^a   Springholz, G ^a   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Germanium; Molecular beam epitaxy; Silicon; Step formation and bunching

Indexed keywords

EPITAXIAL GROWTH; KINETIC THEORY; MORPHOLOGY; PARTICLE BEAM BUNCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; STRAIN; SURFACES; THERMAL EFFECTS;

STEP-BUNCHING;

SURFACE PROPERTIES;

EID: 0038183850     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00232-2     Document Type: Conference Paper

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