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Volumn 584, Issue , 2000, Pages 77-82
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Step bunching during SiGe growth on vicinal Si(111) surfaces
a
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION EFFECTS;
COMPUTER SIMULATION;
CRYSTAL ORIENTATION;
DIFFUSION;
MATHEMATICAL MODELS;
SATURATION (MATERIALS COMPOSITION);
SEMICONDUCTOR GROWTH;
SURFACE STRUCTURE;
THERMAL EFFECTS;
SILICON GERMANIUM COMPOUNDS;
STEP BUNCHING;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0033678029
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
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Times cited : (2)
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References (13)
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