Effect of temperature on incubation time for spontaneous morphology change in electrodeposited copper metallization

Materials Research Society Symposium Proceedings

Volumn 863, Issue , 2005, Pages 209-214

  Ahmed, S ^a   Buckley, D N ^a   Nakahara, S ^a   Kuo, Y ^b  

^a UNIVERSITY OF LIMERICK   (Ireland)

^b Texas AandM University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTRODEPOSITION; METALLIZING; MORPHOLOGY;

ANNEALING TIME; INCUBATION TIME; VACANCY DIFFUSION MECHANISM;

COPPER;

EID: 28844475192     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-863-b5.4     Document Type: Conference Paper

References (28)

1. W. U. Schmidt, R. C. Alkire and A. A. Gewirth, J.Electrochem. Soc., 143, 3122 (1996)
2. J.M.E. Harper and K.P. Rodbell, J. Vac. Sci. Technol. B15, 763 (1997)
3. M. Dietterle, T. Will and D. M. Kolb, Surface Science, 396, 189 (1998)
4. G.R. Stafford, M.D. Vaudin, T.P. Moffat, N. Armstrong, V.D. Jovic and D.R. Kelley, Electrochemical Soc. Proceedings, Vol. 99-34, p. 340 (1999)
5. M. Cerisier, K. Attenborough, J. Fransaer, C. V. Haesendonck and J. P. Celis, J.Electrochem. Soc., 146, 2156 (1999)
6. T. Y. B. Leung, M. Kang, B. F. Corry and A. A. Gewirth, J. Electrochem. Soc., 147, 3326 (2000).
7. T. P. Moffat, J. E. Bonevich, W. H. Huber, A. Stanishevsky, D. R. Kelly, G. R. Stafford and D. Josell, J.Electrochem. Soc., 147, 4524 (2000).
8. A. A. Rasmussen, J. A. D. Jensen, A. Horsewell and M. A. J. Somers, Electrochim. Acta, 47, 67 (2001)
9. J.W. Patten, E.D. McClanahan, and J.W. Johnston, J. Appl. Phys., 42, 4371 (1971)
10. I.V. Tomov, D.S. Stoychev, and I.B. Vitanova, J. Appl. Electrochem., 15, 887 (1985)
11. D.S. Stoychev, I.V. Tomov, and I.B. Vitanova, J.Appl. Electrochem. 15, 879 (1985)
12. T. Titzdorf, L. Craham, S. Jin, C. Mu and D. Fraser, Proc. Int, Interconnect. Technol, Conf. p. 166 (1998)
13. C. Lingk and M.E. Gross, J. Appl. Phys., 84, 5547 (1998)
14. M.E. Gross, C. Lingk, T. Siegrist, E. Coleman, W.L. Brown, K. Ueno, Y. Tsuchiya, N. Itoh, T. Ritzdorf, J. Turner, K. Gibbons, E. Klawuhn, M. Biberger, W.Y.C. Lai, J.F. Miner, G. Wu, and F. Zhang, Mat. Res. Soc. Symp. Proc. 514, 293 (1998)
15. J.M.E. Harper, C. Cabral Jr., P.C. Andricacos, L. Gignac, I.C. Noyan, K.P. Rodbell, and C.K. Hu, J. Appl. Phys., 86, 2516, (1999)
16. D. Walther, M.E. Gross, K Evans-Lutterodt, W.L. Brown, M.Oh, S. Merchant and P. Naresh, Mat. Res. Symp. Proc., Vol. 612, p. D10.1.1. (2000)
17. S. Lagrange, S.H. Brongersma, M. Judeleiviez, A. Saerens, I Vervoort, E. Richards, B. Palmans and K. Marx, Microelectronic Engineering, 50, 449 (2000)
18. W.H.Teh, L.T. Koh, S.M. Chem, J. Xie, C.Y. Li and P.D. Foo, Microelectronics Journal, 32, 579 (2001)
19. D. N. Buckley and S. Ahmed, Electrochem. Solid State Lett., 6, C33-C37 (2003)
20. S. Ahmed and D.N. Buckley in Proceedings of the Symposium on Copper Interconnects, New Contact Metallurgies and Low-k Interlevel Dielectrics (The Electrochemical Society, Pennington, NJ, 2002).
21. R. J. Nichols, E. Bunge, H. Meyer and H. Baumgärtel, Surface Science, 335, 110 (1995).
22. M. Cerisier, C. V. Haesendonck and J. P. Celis, J.Electrochem. Soc., 146, 1829 (1999)
23. S. Ahmed and D. N. Buckley, Abstract No. 163, 205th Meeting of The Electrochemical Society, San Antonio, Texas, May 9-13, 2004
24. S. Nakahara, S. Ahmed, and D. N. Buckley, Abstract No. 913, 206th Meeting of The Electrochemical Society, Honolulu, Hawaii, October 3-8, 2004.
25. Y. Fujiki, J. Phys. Soc. Japan 14, 1308 (1959).
26. L. Tewordt, Phys. Rev. 109, 61 (1958).
27. H. Kimura, R. Maddin, and D. Kuhlmann-Wilsdorf, Acta Met. 7, 145 (1959).
28. W. Schüle, A. Seeger, D. Schumacher, and K. King, Phys. Stat. Sol. 2, 1199 (1962).