Tunneling injection of electrons at nanometer-scale schottky gate edge of AlGaN/GaN heterostructure transistors and its computer simulation

e-Journal of Surface Science and Nanotechnology

Volumn 3, Issue , 2005, Pages 433-438

  Kotani, Junji ^a   Kasai, Seiya ^a   Hasegawa, Hideki ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AlGaN GaN HFETs; Gate leakage currents; Lateral tunneling; Nitrogen vacancy; Oxygen donor; Schottky barrier

Indexed keywords

COMPUTER SIMULATION; FIELD EFFECT SEMICONDUCTOR DEVICES; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES;

ALGAN/GAN HFETS; GATE LEAKAGE CURRENT; LATERAL TUNNELING; NITROGEN VACANCY; XYGEN DONORS;

ELECTRON TUNNELING;

EID: 28844454233     PISSN: 13480391     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2005.433     Document Type: Conference Paper

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