Plasma-induced charging damage in p+-polysilicon PMOSFETs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3212, Issue , 1997, Pages 275-282

  Liu, I M ^a   Chen, Y Y ^a   Joshi, A B ^b   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

^b Rockwell Semiconductor Systems ^*  (United States)

Author keywords

Boron penetration; p+ polysilicon PMOSFET; Plasma induced charging damage

Indexed keywords

ANTENNA STRUCTURES; BORON PENETRATION; CHARGE PUMPING CURRENTS; CONTROL DEVICES; DEVICE PERFORMANCES; GATE OXIDES; INTERFACE PROPERTIES; INTERFACE STATES; LATENT DEFECTS; MAXIMUM TRANSCONDUCTANCES; P+-POLYSILICON PMOSFET; PLASMA CHARGING; PLASMA DAMAGES; PMOSFETS; SUBTHRESHOLD SWINGS;

ANTENNAS; BORON; BORON COMPOUNDS; CHARGE TRAPPING; DEGRADATION; MOSFET DEVICES; NONMETALS; PLASMA DIAGNOSTICS; PLASMAS; POLYSILICON; TRANSCONDUCTANCE;

ELECTROMAGNETIC INDUCTION;

EID: 28744442941     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284602     Document Type: Conference Paper

References (7)

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