|
|
|
Volumn , Issue , 1997, Pages 189-192
|
|
High susceptibility of p+ gate oxides to plasma damage in advanced CMOS technology
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CMOS INTEGRATED CIRCUITS;
CRYSTAL DEFECTS;
DIFFUSION IN SOLIDS;
ELECTRON BEAMS;
INDUCED CURRENTS;
ION BEAMS;
LEAKAGE CURRENTS;
SEMICONDUCTING BORON;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
ELECTRON BEAM INDUCED CURRENTS (EBIC);
FOCUSED ION BEAMS (FIB);
PLASMA CHARGING;
MOS DEVICES;
|
|
EID: 0030685952
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
|
Times cited : (3)
|
|
References (6)
|
