Avoiding plasma induced damage to gate oxide with conductive top film (CTF) on PECVD contact etch stop layer

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2002, Pages 72-73

  Song, Seung Chul ^a   Filipiak, Stan ^a   Perera, Asanga ^a   Turner, Michael ^a   Huang, Fred ^a   Anderson, Steven G H ^a   Kang, Laegu ^a   Min, Byoung ^a   Menke, Doug ^a   Tukunang, Stenly ^a   Venkatesan, Suresh ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILMS; LIGHT ABSORPTION; MOS DEVICES; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; RADIATION DAMAGE;

PLASMA INDUCED DAMAGE (PID);

GATES (TRANSISTOR);

EID: 0036051677     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)