Bake enhanced erratic behavior in gate stress characteristics in flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 246-249

  Tao, Guoqiao ^a,b   Scarpa, Andrea ^a   Van Marwijk, Leo ^a   Dormans, Do ^a  

^a IEEE   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Baking; Disturbance; Flash memory; Retention

Indexed keywords

BAKING; DISTURBANCE; FLASH CELLS; RETENTION;

GATES (TRANSISTOR); RELIABILITY; STRESS ANALYSIS;

FLASH MEMORY;

EID: 28744434483     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

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