A model for EPROM intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1990, Pages 145-149

  Wu, Ken ^a   Pan, Cheng Sheng ^a   Shaw, J J ^a   Freiberger, Philip ^a   Sery, George ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; OXIDES;

CHARGE RETENTION; EPROM; INTERPOLY DIELECTRIC; INTRINSIC CHARGE;

DATA STORAGE, DIGITAL;

EID: 0025600802     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)