Small-signal characteristics of organic semiconductors with continuous energy distribution of traps

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 14, 2005, Pages 2764-2775

  Schmeits, M ^a   Nguyen, N D ^a  

^a UNIVERSITY OF LIÈGE   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS DISTRIBUTION; SEMICONDUCTOR EQUATIONS; TRAP STATES;

ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; LIGHT EMITTING DIODES; SIGNAL PROCESSING;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 28644452533     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200521004     Document Type: Article

References (27)

1. W. Brütting, S. Berleb, and A. G. Mückl, Org. Electron. 2, 1 (2001).
2. A. J. Campbell, D. D. C. Bradley, and D. G. Lidzey, Opt. Mat. 9, 114 (1998).
3. A. J. Campbell, D. D. C. Bradley, E. Werner, and W. Brütting, Org. Electron. 1, 21 (2000).
4. A. J. Campbell, D. D. C. Bradley, E. Werner, and W. Brütting, Synth. Met. 111/112, 273 (2000).
5. S. Berieb, A. G. Mückl, W. Brütting, and M. Schwoerer, Synth. Met. 111/112, 341 (2000).
6. N. Von Malm, R. Schmechel, and H. Von Seggern, Synth. Met. 126, 87 (2002).
7. J. Steiger, R. Schmechel, and H. Von Seggern, Synth. Met. 129, 1 (2002).
8. F. T. Reis, D. Mencaraglia, S. Oould Saad, I. Séguy, M. Oukachmih, P. Jolinat, and P. Destruel, Synth. Met. 138, 33 (2003).
9. D. M. Taylor and H. L. Gomes, J. Phys. D: Appl. Phys. 28, 2554 (1995).
10. M. G. Harrison, J. Grüner, and G. C. W. Spencer, Synth. Met. 76, 7 (1996).
11. J. Scherbel, P. H. Nguyen, G. Paasch, W. Brütting, and M. Schwoerer, J. Appl. Phys. 83, 5045 (1998).
12. S. H. Kim, K. H. Choi, H. M. Lee, D. H. Hwang, L. M. Do, H. Y. Chu, and T. Zyung, J. Appl. Phys. 87, 882 (2000).
13. S. Forero-Lenger, J. Gmeiner, W. Brütting, and M. Schwoerer, Synth. Met. 111/112, 165 (2000).
14. J. Drechsel, M. Pfeiffer, X. Zhou, A. Nollau, and K. Leo, Synth. Met. 127, 201 (2002).
15. Y. S. Lee, J.-H. Park, J. S. Choi, and J. I. Han, Jpn. J. Appl. Phys. 42, 2715 (2003).
16. S. H. Kim, J. W. Jang, K. W. Lee, C. E. Lee, and S. W. Kim, Solid State Commun. 128, 143 (2003).
17. I. H. Campbell, D. L. Smith, and J. P. Ferraris, Appl. Phys. Lett. 66, 3030 (1995).
18. H. L. Gomes, P. Stallinga, H. Rost, A. B. Holmes, M. G. Harrison, and R. H. Friend, Appl. Phys. Lett. 74, 1144 (1999).
19. S. Selberherr, Analysis and Simulation of Semiconductor Devices (Wiley, New York, 1981).
20. M. Sakhaf and M. Schmeits, J. Appl. Phys. 80, 6839 (1996).
21. C. D. J. Blades and A. B. Walker, Synth. Met. 111/112, 335 (2000).
22. G. Paasch and S. Scheinert, Synth. Met. 122, 145 (2001).
23. P. H. Nguyen, S. Scheinert, S. Berieb, W. Brütting, and G. Paasch, Org. Electron. 2, 105 (2001).
24. A. Nesterov, G. Paasch, S. Scheinert, and T. Lindner, Synth. Met. 130, 165 (2002).
25. O. Gaudin, R. B. Jackman, T. P. Nguyen, and P. Le Rendu, J. Appl. Phys. 90, 4196 (2001).
26. G. Paasch, T. Lindner, and S. Scheinert, Synth. Met. 132, 97 (2002).
27. M. Schmeits, N. D. Nguyen, and M. Germain, J. Appl. Phys. 89, 1890 (2001).