Feasibility study of double exposure lithography for 65nm & 45nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5853 PART I, Issue , 2005, Pages 252-264

  Hsu, Stephen ^a   Van Den Broeke, Douglas ^a   Chen, J Fung ^a   Park, Jungchul ^a   Hsu, Michael C W ^a  

^a ASML US Inc   (United States)

Author keywords

DDL; DEL; Double Dipole Lithography; Double exposure lithography; Model based layout conversion; OAI; Off Axis illumination; Polarization; RET; SB; Scattering bars; Shielding

Indexed keywords

LIGHT POLARIZATION; LIGHT SCATTERING; NUMERICAL METHODS; SHIELDING;

DOUBLE DIPOLE LITHOGRAPHY (DDL); DOUBLE EXPOSURE LITHOGRAPHY (DEL); MODEL BASED LAYOUT CONVERSION; OFF-AXIS ILLUMINATION (OAI); SCATTERING BARS (SB);

PHOTOLITHOGRAPHY;

EID: 28544436761     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.617451     Document Type: Conference Paper

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