Vacancy formation in GaAs under different equilibrium conditions

Applied Physics Letters

Volumn 87, Issue 16, 2005, Pages 1-3

  Bondarenko, V ^a   Gebauer, J ^a   Redmann, F ^a   Krause Rehberg, R ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DOPING (ADDITIVES); PHASE EQUILIBRIA; SILICON;

ANNIHILATION; MONOCAVANCYLIKE DEFECTS;

GALLIUM COMPOUNDS;

EID: 28444482807     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2084330     Document Type: Article

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