Suitability and optimization of high-voltage IGBTs for series connection with active voltage clamping

IEEE Transactions on Power Electronics

Volumn 20, Issue 6, 2005, Pages 1244-1253

  Bauer, Friedhelm ^a   Meysenc, Luc ^a   Piazzesi, Alice ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

High voltage integrated gate bipolar transistors (HV IGBTs); Nonpunchthrough (NPT); Punchthrough (PT); Reverse biased safe operating area (RBSOA)

Indexed keywords

COMPUTER SIMULATION; OPTIMIZATION; VOLTAGE CONTROL; WAVEFORM ANALYSIS;

ACTIVE VOLTAGE CLAMPING; HIGH VOLTAGE INTEGRATED GATE BIPOLAR TRANSISTORS; NONPUNCHTHROUGH (NPT); PUNCHTHROUGH (PT); REVERSE BIASED SAFE OPERATING AREA (RBSOA);

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 28444436248     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2005.857515     Document Type: Article

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