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Volumn 47, Issue 1, 2003, Pages 45-50

Helium irradiated high-power P-i-N diode with low ON-state voltage drop

Author keywords

Helium; Lifetime control; Platinum; Power diodes; Silicon

Indexed keywords

ANODES; ELECTRON IRRADIATION; HELIUM; PLATINUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

EID: 0037210867     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00250-2     Document Type: Article
Times cited : (13)

References (14)
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  • 2
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    • Production of fast switching power thyristors by proton irradiation
    • Sawko D.C., Bartko J. Production of fast switching power thyristors by proton irradiation. IEEE Trans. Nucl. Sci. NS-30:1983;1756-1758.
    • (1983) IEEE Trans. Nucl. Sci. , vol.NS-30 , pp. 1756-1758
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  • 3
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    • Local lifetime control by light ion irradiation: Impact on blocking capability of power P-i-N diode
    • Hazdra P., Brand K., Rubeš J., Vobecký J. Local lifetime control by light ion irradiation: impact on blocking capability of power P-i-N diode. Microelectron. J. 32:2001;449-456.
    • (2001) Microelectron. J. , vol.32 , pp. 449-456
    • Hazdra, P.1    Brand, K.2    Rubeš, J.3    Vobecký, J.4
  • 4
    • 0020250145 scopus 로고
    • Platinum silicide ohmic contacts to shallow junctions in silicon
    • Cohen S.S., Piacente P.A., Gildenblat G., Brown D.M. Platinum silicide ohmic contacts to shallow junctions in silicon. J. Appl. Phys. 53(12):1982;8856-8862.
    • (1982) J. Appl. Phys. , vol.53 , Issue.12 , pp. 8856-8862
    • Cohen, S.S.1    Piacente, P.A.2    Gildenblat, G.3    Brown, D.M.4
  • 5
  • 7
    • 36449008811 scopus 로고
    • Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon
    • Holm B., Nielsen K.B. Spatial confinement and saturation of substitutional platinum by diffusion into ion-beam damaged silicon. J. Appl. Phys. 78(10):1995;5970-5974.
    • (1995) J. Appl. Phys. , vol.78 , Issue.10 , pp. 5970-5974
    • Holm, B.1    Nielsen, K.B.2
  • 8
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    • The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses
    • Schmidt D.C., Svensson G., Godey S., Ntsoenzok E., Barbot J.F., Blanchard C. The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses. Appl. Phys. Lett. 74(22):1999;3329-3331.
    • (1999) Appl. Phys. Lett. , vol.74 , Issue.22 , pp. 3329-3331
    • Schmidt, D.C.1    Svensson, G.2    Godey, S.3    Ntsoenzok, E.4    Barbot, J.F.5    Blanchard, C.6
  • 9
    • 0036645823 scopus 로고    scopus 로고
    • High-power P-I-N diode with the local lifetime control based on the proximity gettering of platinum
    • accepted for publication
    • Vobecký J., Hazdra P. High-power P-I-N diode with the local lifetime control based on the proximity gettering of platinum. IEEE Electron Dev Lett, accepted for publication, 2002.
    • (2002) IEEE Electron. Dev. Lett.
    • Vobecký, J.1    Hazdra, P.2
  • 10
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    • Optimization of power diode characteristics by means of ion irradiation
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    • (1996) IEEE Trans. Electron Dev. , vol.43 , Issue.12 , pp. 2283-2289
    • Vobecký, J.1    Hazdra, P.2    Homola, J.3
  • 13
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    • Improvement of the diode characteristics using emitter-controlled principles (EMCON-DIODE)
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  • 14
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    • Crossing point current of electron and proton irradiated power P-i-N diodes
    • Vobecký J., Hazdra P., Humbel O., Galster N. Crossing point current of electron and proton irradiated power P-i-N diodes. Microelectron. Reliab. 40:2000;427-433.
    • (2000) Microelectron. Reliab. , vol.40 , pp. 427-433
    • Vobecký, J.1    Hazdra, P.2    Humbel, O.3    Galster, N.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.