A high voltage IGBT and diode chip set designed for the 2.8 kV DC link level with short circuit capability extending to the maximum blocking voltage

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 29-32

  Bauer, F ^a   Kaminski, N ^a   Linder, S ^a   Zeller, H ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC LOSSES; PERFORMANCE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SHORT CIRCUIT CURRENTS; SWITCHING;

COSMIC RAY INDUCED FAILURE RATE; DIODE CHIP SET; MAXIMUM BLOCKING VOLTAGE REQUIREMENT; REVERSE RECOVERY;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034449709     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Design considerations and characteristics of rugged punchthrough (PT) IGBTs with 4.5 kV blocking capability
2. Cosmic ray induced failures in high power semiconductor devices
3. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to thyristors
4. Axial recombination centre technology for frewheeling diodes
5. Experimental study on plasma engineering in 6500 V IGBTs